Atomera Incorporated announced a strategic collaboration with Incize, a Belgian semiconductor characterization and modeling company. This partnership aims to enhance Gallium Nitride on Silicon (GaN-on-Si) technologies, which offer a scalable and cost-effective alternative to traditional silicon in certain applications. The collaboration is expected to accelerate the path to volume production of next-generation RF and power devices.
The joint program will combine Atomera’s proprietary Mears Silicon Technology (MST) with Incize’s advanced characterization platforms, which cover substrate trap analysis, noise, linearity, thermal effects, and RF performance. The focus is on optimizing GaN-on-Si device performance for high-frequency and high-power applications. MST has already demonstrated promising advantages in silicon-based devices.
Target markets for this enhanced GaN-on-Si technology include wireless infrastructure (5G/6G), satellite communications, and advanced power electronics. This collaboration marks a significant step toward bridging material innovation with device-level performance in the semiconductor landscape. It leverages Incize’s expertise in RF device physics and measurement capabilities to explore MST's contribution to advancing GaN-on-Si technology.
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