Atomera Incorporated announced a user project at the Center for Integrated Nanotechnologies (CINT) at Sandia National Laboratories. This collaboration aims to address the challenges of growing Gallium Nitride (GaN) films on Silicon (Si) substrates. The project will create and test the world’s first GaN transistors utilizing Atomera’s Mears Silicon Technology (MST).
The effort builds upon improvements already observed at the materials level in GaN/MST on Silicon wafers. MST represents an opportunity to improve GaN on Si manufacturing, providing speed, efficiency, and cost-saving benefits to industries including electronics, RF/microwave electronics, and MicroLEDs. CINT’s specialized tools and technology will allow for quick evaluation of the MST solution.
Managing stress is a critical aspect of growing thick GaN epitaxy on Si, with current commercial GaN on Si power electronics devices limited to approximately 650V. MST can improve the growth of GaN epitaxy on Si substrates by relieving biaxial tensile stress. This validation project is a significant step towards enabling high-volume, low-cost GaN devices.
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