Micron has shipped qualification samples of its new automotive Universal Flash Storage (UFS) 4.1, a flash memory solution that delivers 4.2 GB/s of sequential read bandwidth—double the speed of the previous UFS 3.1 generation. The performance boost is achieved through Micron’s 9th‑generation (G9) 3D NAND technology, which offers higher density and faster access times while maintaining the reliability required for automotive use.
The UFS 4.1 package meets a full suite of automotive safety and security standards, including AEC‑Q104 qualification, ISO 26262 ASIL B compliance, ASPICE 3 Level 3 alignment, and ISO/SAE 21434 cybersecurity requirements. These certifications enable the storage to support real‑time telemetry, predictive maintenance, and on‑board AI model deployment—capabilities that are becoming essential for advanced driver‑assist systems and in‑cabin infotainment platforms.
In addition to bandwidth, the new solution offers significant boot‑time improvements: device boot is 30 % faster and system boot is 18 % faster than the predecessor. Endurance specifications are robust, with up to 100,000 program/erase cycles in single‑level cell mode and 3,000 cycles in triple‑level cell mode. Thermal protection allows consistent performance from –40 °C to 115 °C, covering the full range of automotive operating temperatures.
Micron’s management highlighted the strategic importance of the launch. “The automotive UFS 4.1 is engineered to deliver exceptional safety, reliability and performance, enabling the automotive industry to advance intelligent mobility and unlock AI at the edge,” said Kris Baxter, Corporate Vice President and General Manager of Micron’s Automotive and Embedded Business Unit. The product is positioned to capture growing demand for AI‑enabled in‑cabin experiences and autonomous driving, potentially opening new revenue streams and strengthening Micron’s competitive edge in the automotive memory market.
Analysts have noted that Micron’s strong financial performance in data‑center and AI segments, combined with this new automotive offering, supports a positive outlook for the company’s future growth. The launch aligns with industry trends toward higher‑bandwidth, low‑latency storage for autonomous and connected vehicle applications, and places Micron in a stronger position relative to competitors such as Samsung and SK Hynix, who are also expanding their automotive memory portfolios.
Micron’s G9 NAND foundation, coupled with the UFS 4.1’s compliance and performance, signals the company’s commitment to leading the next wave of automotive technology. The product’s ability to accelerate AI workloads and meet stringent safety standards positions Micron to capture a larger share of the rapidly expanding automotive memory market, where demand for high‑speed, reliable storage is expected to grow as vehicles become increasingly connected and autonomous.
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